大概就是 2080ti+i9-9900ks+Z390 ,内存是 ddr4 (这一点我有点迷糊,频率显示是 2137 ,但我记得型号应该是海盗船的 4266 啊)
https://static01.imgkr.com/temp/ed4fabca11b94d069b2ed0c19b2ceb20.png目前打算先升级下内存,换 ddr4 16Gx4 的,想问下有哪些品牌可以推荐?如果能附上京东链接,不胜感激。
顺便问下我这 CPU 能带的动 4090 嘛?
HWiNFO64 Version 7.26-4800
ROG -----------------------------------------------------------------------
[当前计算机]
电脑品牌名称: ASUS
[操作系统]
中央处理器 ----------------------------------------------------------------
[CPU 单元数量]
处理器封装数量 (物理): 1
处理器核心数量: 8
逻辑处理器数量: 16
Intel Core i9-9900KS ------------------------------------------------------
[常规信息]
处理器名称: Intel Core i9-9900KS
原始处理器频率: 4000.0 MHz
Original Processor Frequency [MHz]: 4000
CPU ID: 000906ED
CPU 品牌名称: Intel(R) Core(TM) i9-9900KS CPU @ 4.00GHz
CPU 供应商: GenuineIntel
CPU 步进: R0
CPU 代号: Coffee Lake-S
CPU 技术: 14 nm
CPU S-Spec: SRG1Q
主板 ----------------------------------------------------------------------
[计算机]
电脑品牌名称: ASUS
[Motherboard]
主板型号: ASUS ROG MAXIMUS XI EXTREME
主板芯片组: Intel Z390 (Cannon Lake-H)
主板插槽: 2xPCI Express x1, 1xPCI Express x2, 2xPCI Express x4, 1xPCI Express x8, 1xPCI Express x16
支持的 PCI Express 版本: v3.0
支持的 USB 版本: v3.1
[BIOS]
BIOS 制造商: American Megatrends Inc.
BIOS 日期: 12/01/2020
BIOS 版本: 1802
UEFI BIOS: 有能力
Row: 0 [BANK 0/ChannelA-DIMM1] - 8 GB PC4-34100 DDR4 SDRAM G.Skill F4-4266C19-8GTRS
[通用模块信息]
模块编号: 0
模块尺寸: 8 GBytes
内存类型: DDR4 SDRAM
模块类型: Unbuffered DIMM (UDIMM)
内存速度: 2136.8 MHz (DDR4-4273 / PC4-34100)
模块制造商: G.Skill
模块部件号: F4-4266C19-8GTRS
模块修订版本: 0.0
模块序列号: N/A
模块生产日期: 年: 2019, 星期: 43
模组制造地点: 0
SDRAM 制造商: Samsung
DRAM Steppping: 0.0
错误检查 /纠正: None
[模块特性]
行地址位: 16
列地址位: 10
模块密度: 8192 Mb
等级数: 1
银行集团数量: 4
设备宽度: 8 bits
Bus Width: 64 bits
Die Count: 1
模块标称电压( VDD ): 1.2 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.93800 ns (1066 MHz)
最大 SDRAM 周期时间 (tCKAVGmax): 1.60000 ns
CAS#支持的延迟: 10, 11, 12, 13, 14, 15, 16
最小 CAS# 延迟时间 (tAAmin): 13.750 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
支持的模块时序 1066.7 MHz: 15-15-15-36
支持的模块时序 933.3 MHz: 13-13-13-31
支持的模块时序 800.0 MHz: 11-11-11-27
支持的模块时序 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[特点]
模块温度传感器( TSOD ): 不支持
模块标称高度: 31 - 32 mm
模块最大厚度(正面): 1 - 2 mm
模块最大厚度(背面): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[认证配置文件 [已启用]]
模块 VDD 电压电平: 1.40 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.46800 ns (2133 MHz)
CAS#支持的延迟: 19
最小 CAS# 延迟时间 (tAAmin): 8.857 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 8.857 ns
Minimum Row Precharge Time (tRPmin): 8.857 ns
Minimum Active to Precharge Time (tRASmin): 18.250 ns
支持的模块时序 2133.3 MHz: 19-19-19-39
支持的模块时序 2100.0 MHz: 19-19-19-39
支持的模块时序 2066.7 MHz: 19-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 27.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 1.627 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 1 [BANK 1/ChannelA-DIMM2] - 8 GB PC4-34100 DDR4 SDRAM G.Skill F4-4266C19-8GTRS
[通用模块信息]
模块编号: 1
模块尺寸: 8 GBytes
内存类型: DDR4 SDRAM
模块类型: Unbuffered DIMM (UDIMM)
内存速度: 2136.8 MHz (DDR4-4273 / PC4-34100)
模块制造商: G.Skill
模块部件号: F4-4266C19-8GTRS
模块修订版本: 0.0
模块序列号: N/A
模块生产日期: 年: 2019, 星期: 43
模组制造地点: 0
SDRAM 制造商: Samsung
DRAM Steppping: 0.0
错误检查 /纠正: None
[模块特性]
行地址位: 16
列地址位: 10
模块密度: 8192 Mb
等级数: 1
银行集团数量: 4
设备宽度: 8 bits
Bus Width: 64 bits
Die Count: 1
模块标称电压( VDD ): 1.2 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.93800 ns (1066 MHz)
最大 SDRAM 周期时间 (tCKAVGmax): 1.60000 ns
CAS#支持的延迟: 10, 11, 12, 13, 14, 15, 16
最小 CAS# 延迟时间 (tAAmin): 13.750 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
支持的模块时序 1066.7 MHz: 15-15-15-36
支持的模块时序 933.3 MHz: 13-13-13-31
支持的模块时序 800.0 MHz: 11-11-11-27
支持的模块时序 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[特点]
模块温度传感器( TSOD ): 不支持
模块标称高度: 31 - 32 mm
模块最大厚度(正面): 1 - 2 mm
模块最大厚度(背面): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[认证配置文件 [已启用]]
模块 VDD 电压电平: 1.40 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.46800 ns (2133 MHz)
CAS#支持的延迟: 19
最小 CAS# 延迟时间 (tAAmin): 8.857 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 8.857 ns
Minimum Row Precharge Time (tRPmin): 8.857 ns
Minimum Active to Precharge Time (tRASmin): 18.250 ns
支持的模块时序 2133.3 MHz: 19-19-19-39
支持的模块时序 2100.0 MHz: 19-19-19-39
支持的模块时序 2066.7 MHz: 19-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 27.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 1.627 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 2 [BANK 2/ChannelB-DIMM1] - 8 GB PC4-34100 DDR4 SDRAM G.Skill F4-4266C19-8GTRS
[通用模块信息]
模块编号: 2
模块尺寸: 8 GBytes
内存类型: DDR4 SDRAM
模块类型: Unbuffered DIMM (UDIMM)
内存速度: 2136.8 MHz (DDR4-4273 / PC4-34100)
模块制造商: G.Skill
模块部件号: F4-4266C19-8GTRS
模块修订版本: 0.0
模块序列号: N/A
模块生产日期: 年: 2019, 星期: 43
模组制造地点: 0
SDRAM 制造商: Samsung
DRAM Steppping: 0.0
错误检查 /纠正: None
[模块特性]
行地址位: 16
列地址位: 10
模块密度: 8192 Mb
等级数: 1
银行集团数量: 4
设备宽度: 8 bits
Bus Width: 64 bits
Die Count: 1
模块标称电压( VDD ): 1.2 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.93800 ns (1066 MHz)
最大 SDRAM 周期时间 (tCKAVGmax): 1.60000 ns
CAS#支持的延迟: 10, 11, 12, 13, 14, 15, 16
最小 CAS# 延迟时间 (tAAmin): 13.750 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
支持的模块时序 1066.7 MHz: 15-15-15-36
支持的模块时序 933.3 MHz: 13-13-13-31
支持的模块时序 800.0 MHz: 11-11-11-27
支持的模块时序 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[特点]
模块温度传感器( TSOD ): 不支持
模块标称高度: 31 - 32 mm
模块最大厚度(正面): 1 - 2 mm
模块最大厚度(背面): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[认证配置文件 [已启用]]
模块 VDD 电压电平: 1.40 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.46800 ns (2133 MHz)
CAS#支持的延迟: 19
最小 CAS# 延迟时间 (tAAmin): 8.857 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 8.857 ns
Minimum Row Precharge Time (tRPmin): 8.857 ns
Minimum Active to Precharge Time (tRASmin): 18.250 ns
支持的模块时序 2133.3 MHz: 19-19-19-39
支持的模块时序 2100.0 MHz: 19-19-19-39
支持的模块时序 2066.7 MHz: 19-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 27.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 1.627 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
Row: 3 [BANK 3/ChannelB-DIMM2] - 8 GB PC4-34100 DDR4 SDRAM G.Skill F4-4266C19-8GTRS
[通用模块信息]
模块编号: 3
模块尺寸: 8 GBytes
内存类型: DDR4 SDRAM
模块类型: Unbuffered DIMM (UDIMM)
内存速度: 2136.8 MHz (DDR4-4273 / PC4-34100)
模块制造商: G.Skill
模块部件号: F4-4266C19-8GTRS
模块修订版本: 0.0
模块序列号: N/A
模块生产日期: 年: 2019, 星期: 43
模组制造地点: 0
SDRAM 制造商: Samsung
DRAM Steppping: 0.0
错误检查 /纠正: None
[模块特性]
行地址位: 16
列地址位: 10
模块密度: 8192 Mb
等级数: 1
银行集团数量: 4
设备宽度: 8 bits
Bus Width: 64 bits
Die Count: 1
模块标称电压( VDD ): 1.2 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.93800 ns (1066 MHz)
最大 SDRAM 周期时间 (tCKAVGmax): 1.60000 ns
CAS#支持的延迟: 10, 11, 12, 13, 14, 15, 16
最小 CAS# 延迟时间 (tAAmin): 13.750 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 33.000 ns
支持的模块时序 1066.7 MHz: 15-15-15-36
支持的模块时序 933.3 MHz: 13-13-13-31
支持的模块时序 800.0 MHz: 11-11-11-27
支持的模块时序 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 46.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.700 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.300 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.625 ns
[特点]
模块温度传感器( TSOD ): 不支持
模块标称高度: 31 - 32 mm
模块最大厚度(正面): 1 - 2 mm
模块最大厚度(背面): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 2.0
[认证配置文件 [已启用]]
模块 VDD 电压电平: 1.40 V
最小 SDRAM 周期时间 (tCKAVGmin): 0.46800 ns (2133 MHz)
CAS#支持的延迟: 19
最小 CAS# 延迟时间 (tAAmin): 8.857 ns
最小 RAS# 到 CAS# 延迟 (tRCDmin): 8.857 ns
Minimum Row Precharge Time (tRPmin): 8.857 ns
Minimum Active to Precharge Time (tRASmin): 18.250 ns
支持的模块时序 2133.3 MHz: 19-19-19-39
支持的模块时序 2100.0 MHz: 19-19-19-39
支持的模块时序 2066.7 MHz: 19-19-19-38
Minimum Active to Active/Refresh Time (tRCmin): 27.125 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 24.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 1.627 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.849 ns
图形适配器 ----------------------------------------------------------------
NVIDIA GeForce RTX 2080 Ti ------------------------------------------------
[图形芯片组]
图形芯片组: NVIDIA GeForce RTX 2080 Ti
图形芯片组代号: TU102-300A
显存: 11264 MBytes of GDDR6 SDRAM [Samsung]
[显卡]
显卡: EVGA RTX 2080 Ti KINGPIN Gaming (11G-P4-2589)
显卡总线: PCIe v3.0 x16 (8.0 GT/s) @ x16 (8.0 GT/s)
图形 RAMDAC: Integrated RAMDAC
图形 BIOS 版本: 90.02.30.00.77 [UEFI]
图形芯片组修订版本: A1
[性能]
图形处理器频率: 1215.0 MHz
视频单元频率: 1125.0 MHz
显存频率: 1750.0 MHz (有效 14000.0 MHz)
图形内存总线宽度: 352-bit
ROP 数量: 88
统一着色器数量: 4352
光线追踪核心数: 68
张量核心数: 544
TMU 数量(纹理映射单元): 272
ASIC Manufacturer: TSMC
ASIC 序列号: 438489448849
NVIDIA SLI 状态: 不存在
可调整大小的 BAR (ReBAR) 支持: 已支持
可调整大小的 BAR (ReBAR) 状态: 已禁用 (256 MB)
Hardware ID: PCI\VEN_10DE&DEV_1E07&SUBSYS_25893842&REV_A1
PCI 位置(总线:设备:功能): 1:00:0
[设备驱动程序信息]
驱动器制造商: NVIDIA
驱动程序说明: NVIDIA GeForce RTX 2080 Ti
驱动程序提供者: NVIDIA
驱动版本: 31.0.15.2225 (GeForce 522.25)
设备驱动程序日期: 06-Oct-2022
DCH/UWD Driver: 有能力
DeviceInstanceId PCI\VEN_10DE&DEV_1E07&SUBSYS_25893842&REV_A1\4&23B96B75&0&0008
Location Paths PCIROOT(0)#PCI(0100)#PCI(0000)